FDMC86102LZ

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100V N-Channel Power Trench® MOSFET

General Description

This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
FDMC86102LZ Full Production Green as of Feb 2011 $0.421 MLP 3.3x3.3 8L (Power 33) 8 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&2 (2-Digit Date Code) &K
Line 2:FDMC
Line 3:86102Z
RTHETA (JA) :  53  °C/W
RTHETA (JC) :  3  °C/W
Moisture Sensitivity Level (MSL) :  1  
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Features

  • Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A
  • Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A
  • HBM ESD protection level 6 KV typical (Note 4)
  • 100% UIL Tested
  • RoHS Compliant

Applications

  • TBA

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
MLP 3.3x3.3 8L (Power 33) Electrical -55°C to 150°C N/A Orcad 16.3 Feb 28, 2012
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