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FDMC8854
30V N-Channel Power Trench® MOSFET

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Contents

General Description
Features
Applications
Product Status/Pricing/Packaging
Order Samples
Models
Application Notes
Qualification Support

General Description

This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications.

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Features

  • Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 15A
  • Max rDS(on) = 7.6mΩ at VGS = 4.5V, ID = 13A
  • Low Profile - 1mm max in Power 33
  • RoHS Compliant
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    Applications

  • DC - DC Conversion
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    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FDMC8854Full ProductionGreen$0.71Power 338TAPE REEL PDFLine 1: $Y (Fairchild logo)
    &Z (Asm. Plant Code)
    &2 (2-Digit Date Code)
    &K Line 2: FDMC Line 3: 8854
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FDMC8854 is available. Click here for more information .

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    Models

    Package & leadsConditionTemperature rangeSoftware versionRevision date
    Pspice_Bsim3.1
    Power 33-8Electrical-55°C to 150°COrcad 10.3Jun 11, 2007

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    Application Notes

    AN-9040: AN-9040 Assembly Guidelines for Power33 Packaging (302 K) Oct 30, 2009
     

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    Qualification Support

    Click on a product for detailed qualification data

    Product
    FDMC8854

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