FDMC8884

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30V N-Channel Power Trench® MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
FDMC8884 Full Production Green as of Feb 2008 $0.339 MLP 3.3x3.3 8L (Power 33) 8 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&2 (2-Digit Date Code) &K
Line 2:FDMC
Line 3:8884
FIT :  25.2  
RTHETA (JA) :  53  °C/W
RTHETA (JC) :  6.6  °C/W
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Features

  • Max rDS(on) = 19mΩ at VGS = 10V, ID = 9.0A
  • Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.2A
  • High performance trchnology for extremely low rDS(on)
  • Termination is Lead-free and RoHS Compliant

Applications

  • Notebook PC

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
MLP 3.3x3.3 8L (Power 33) Electrical -55°C to 150°C N/A OrCAD 15.7 Feb 28, 2012
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