This device is designed specifically as a single-package solution for a DC/DC switching MOSFET in cellular handset and other mobile applications. It features an independent N-channel & P-channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.
The MicroFET™ 1.6x1.6 thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
| Product | Product & Eco Status | *Pricing | Packaging & Packing Info | **Package Marking Convention | Qualification Support | Compliance Certificates |
|---|---|---|---|---|---|---|
| FDME1034CZT |
Full Production Green as of Jul 2009 |
$0.247 | UMLP 1.6x1.6 6L (MicroFET) Details TAPE REEL |
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RTHETA (JA) :
90
°C/W Moisture Sensitivity Level (MSL) : 1 Max Reflow Temp : 260 |
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| Application Note | Description |
|---|---|
| AN-9065 | FRFET® in Synchronous Rectification(156 K) 14-Feb-2013 |
| AN-9010 | MOSFET Basics(361 K) 05-Mar-2011 |
| AN-6099 | New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications(1,172 K) 12-Mar-2013 |
| AN-7510 | A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options(222 K) 05-Mar-2011 |
| AN-558 | Introduction to Power MOSFETs and their Applications(244 K) 03-May-2013 |
| AN-7533 | A Revised MOSFET Model With Dynamic Temperature Compensation(132 K) 05-Mar-2011 |
| AN-9005 | Driving and Layout Design for Fast Switching Super-Junction MOSFETs(1,778 K) 14-Feb-2013 |
| AN-9747 | Assembly Guidelines for MicroFET™ 1.6x1.6mm Dual Packaging(431 K) 02-Nov-2011 |
| AN-9746 | Assembly Guidelines for MicroFET™ 1.6x1.6mm Packaging(543 K) 02-Nov-2011 |
For additional information please visit the Models page.
| Package | Condition | Temperature Range | Vcc Range | Software Version | Revision Date |
|---|---|---|---|---|---|
| PSPICE | |||||
| UMLP 1.6x1.6 6L (MicroFET) | Electrical | -55°C to 150°C | N/A | Orcad 16.3 | Feb 28, 2012 |