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FDME1034CZT

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20V Complementary PowerTrench® MOSFET

General Description

This device is designed specifically as a single-package solution for a DC/DC switching MOSFET in cellular handset and other mobile applications. It features an independent N-channel & P-channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.

The MicroFET™ 1.6x1.6 thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Product Status/Pricing/Packing

Fairchild 1,000 piece Budgetary Pricing. *
If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
Top mark packaging information for product FDME1034CZT is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	Qualification Support	RoHS IPC1752	RoHS/REACH/ JIG Certificate of Compliance
FDME1034CZT	Full Production	Green as of Jul 2009	$0.247	UMLP 1.6x1.6 6L (MicroFET)	6	TAPE REEL		Line 1:&E (Space) &Y (Binary Calendar Year Coding) Show more ... Line 2:&O (Plant Code) 5T&C (Die Run) Line 3:&. (Pin One) &O (Plant Code) &V (Eight Week Binary Datecoding)	FIT : 28.2 RTHETA (JA) : 90 °C/W Moisture Sensitivity Level (MSL) : 1 Show more ... Max Reflow Temp : 260

Support

Engineering Connections

Features

Q1: N-Channel

Max. R_DS(on) = 66 mΩ at V_GS = 4.5 V, I_D = 3.4A
Max. R_DS(on) = 86 mΩ at V_GS = 2.5 V, I_D = 2.9A
Max. R_DS(on) = 113 mΩ at V_GS = 1.8 V, I_D = 2.5A
Max. R_DS(on) = 160 mΩ at V_GS= 1.5 V, I_D = 2.1A

Q2: P-Channel

Max. R_DS(on) = 142 mΩ at V_GS = -4.5 V, I_D = -2.3A
Max. R_DS(on) = 213 mΩ at V_GS = -2.5 V, I_D = -1.8A
Max. R_DS(on) = 331 mΩ at V_GS = -1.8 V, I_D = -1.5A
Max. R_DS(on) = 530 mΩ at V_GS = -1.5 V, I_D = -1.2A
Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level 1600V (see datasheet Note 3)
RoHS Compliant

Applications

AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB

Automation

Broadband Access

Broadband Modem

Broadcast & Studio

Building & Home Control

Camcorder

Central Office

Consumer Appliances

CRT/RPTV

Desktop PC

DSC

DVD

E-book Reader

Enterprise Voice Network

External AC-DC Merchant Power Supply - Wireless Communications

Graphic Card

Home Audio System Components

LCD Monitor

LCD TV

Long-haul & Metro

Media Tablets

Medical Electronics/Devices

Military & Civil Aerospace

Mobile Comm Infrastructure

Mobile Handsets

Notebook PC

Other Audio & Video

Other Consumer Electronics

Other Data Processing

Other Industrial

Other Wired Communications

Other Wireless Communications

PC Server

PDP TV

PMP/MP3 Players

Printer

Routers & LAN Switches

SAN

Server & Mainframe

Set Top Boxes

Storage & Peripherals

Test and Measurement

Video Game Console

Wireless LAN Access Point/Router

Wireless LAN Card & Broadband Access

Workstation

Application Notes

AN-7510: A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options (222 K) Mar 05, 2011
AN-7533: A Revised MOSFET Model With Dynamic Temperature Compensation (132 K) Mar 05, 2011
AN-9010: MOSFET Basics (361 K) Mar 05, 2011
AN-558: Introduction to Power MOSFETs and their Applications (205 K) Mar 05, 2011
AN-9747: Assembly Guidelines for MicroFET™ 1.6x1.6mm Dual Packaging (431 K) Nov 02, 2011
AN-9746: Assembly Guidelines for MicroFET™ 1.6x1.6mm Packaging (543 K) Nov 02, 2011

Browse All Application Notes

Models

For additional information please visit the Models page .

Package	Condition	Temperature range	Vcc range	Software version	Revision date
PSPICE
UMLP 1.6x1.6 6L (MicroFET)	Electrical	-55°C to 150°C	N/A	Orcad 16.3	Feb 28, 2012