40V N-Channel PowerTrench® MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.
Product Status/Pricing/Packing
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Features
■ Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A ■ Advanced Package and Silicon combination for low rDS(on) and high efficiency ■ Next generation enhanced body diode technology, engineered for soft recovery ■ MSL1 robust package design ■ 100% UIL tested ■ RoHS Compliant Application Notes
ModelsFor additional information please visit the Models page .
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