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40V N-Channel Power Trench® MOSFET
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General Description
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This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
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Features
| Max rDS(on) = 2.2mΩ at VGS = 10V, ID = 25A
Max rDS(on) = 3.0mΩ at VGS = 4.5V, ID = 21.7A
Advanced Package and Silicon combination for low rDS(on)
MSL1 robust package design
100% UIL tested
RoHS Compliant
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Applications
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Datasheet
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Product Status/Pricing/Packaging
| FDMS8460 | Full Production | Green | $1.74 | Power 56 (PQFN) | 8 | TAPE REEL
| | Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2: FDMS
Line 3: 8460
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Models
| Power 56 (PQFN)-8 | Electrical | -55°C to 150°C | OrCAD 15.7 | Jan 11, 2008 |
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Application Notes
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Qualification Support
Click on a product for detailed qualification data
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Eco Status