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General Description
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This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
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Features
| Max rDS(on) = 2.2mΩ at VGS = 10V, ID = 25A
Max rDS(on) = 3.0mΩ at VGS = 4.5V, ID = 21.7A
Advanced Package and Silicon combination for low rDS(on)
MSL1 robust package design
100% UIL tested
RoHS Compliant
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Applications
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Datasheet
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