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FDMS8460
40V N-Channel Power Trench MOSFET

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Contents

•General Description
•Features
•Applications
•Product Status/Pricing/Packaging
•Order Samples
•Models
•Application Notes
•Qualification Support

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

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Features

  • Max rDS(on) = 2.2mΩ at VGS = 10V, ID = 25A
  • Max rDS(on) = 3.0mΩ at VGS = 4.5V, ID = 21.7A
  • Advanced Package and Silicon combination for low rDS(on)
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant
    		•

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    Applications

  • DC - DC Conversion
    		•

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    Datasheet
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    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FDMS8460Full ProductionGreen$1.74Power 56 (PQFN)8TAPE REEL PDFLine 1: $Y (Fairchild logo)
    &Z (Asm. Plant Code)
    &3 (3-Digit Date Code)
    &K Line 2: FDMS Line 3: 8460
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FDMS8460 is available. Click here for more information .

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    Models

    Package & leadsConditionTemperature rangeSoftware versionRevision date
    Pspice_Bsim3.1
    Power 56 (PQFN)-8Electrical-55°C to 150°COrCAD 15.7Jan 11, 2008

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    Application Notes

    AN-9036: AN-9036 Guidelines for Using Fairchild's Power56 (366 K) Jun 27, 2008
    		 

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    Qualification Support

    Click on a product for detailed qualification data

    Product
    FDMS8460

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