FDMS8622

Datasheet Buy Sample

100V N-Channel Power Trench® MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
FDMS8622 Full Production Green as of Mar 2011 $0.348 PQFN 5x6 8L (Power 56) 8 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FDMS
Line 3:8622
RTHETA (JA) :  50  °C/W
RTHETA (JC) :  4  °C/W
Moisture Sensitivity Level (MSL) :  1  
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Features

  • Max rDS(on) = 56 mΩ at VGS = 10 V, ID = 4.8 A
  • Max rDS(on) = 88 mΩ at VGS = 6 V, ID = 3.9 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • 100% UIL Tested
  • Termination is Lead-free and RoHS Compliant

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
PQFN 5x6 8L (Power 56) Electrical -55°C to 150°C N/A Orcad 16.3 Feb 28, 2012
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