FDMS86500DC

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60V N-Channel Dual Cool™ Power Trench® MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremelylow Junction-to-Ambient thermal resistance.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
FDMS86500DC Full Production Green as of Apr 2011 $1.16 PQFN 5x6 8L (Dual Cool 56) 8 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:86500
RTHETA (JA) :  38  °C/W
RTHETA (JC) :  2.8  °C/W
Moisture Sensitivity Level (MSL) :  1  
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Features

    ■ Dual Cool™ Top Side Cooling PQFN package
    ■ Max rDS(on) = 2.3 mΩ at VGS = 10 V, ID = 29 A
    ■ Max rDS(on) = 3.3 mΩ at VGS = 8 V, ID = 24 A
    ■ High performance technology for extremely low rDS(on)
    ■ 100% UIL Tested
    ■ RoHS Compliant

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
PQFN 5x6 8L (Dual Cool 56) Electrical -55°C to 150°C N/A Orcad 16.3 Feb 28, 2012
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