60V N-Channel Dual Cool™ Power Trench® MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremelylow Junction-to-Ambient thermal resistance.
Product Status/Pricing/Packing
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Features
■ Max rDS(on) = 2.3 mΩ at VGS = 10 V, ID = 29 A ■ Max rDS(on) = 3.3 mΩ at VGS = 8 V, ID = 24 A ■ High performance technology for extremely low rDS(on) ■ 100% UIL Tested ■ RoHS Compliant Application Notes
ModelsFor additional information please visit the Models page .
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