60V N-Channel PowerTrench® MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch noderinging of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimizedfor low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Product Status/Pricing/Packing
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Features
■ Max rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A ■ Advanced Package and Silicon combination for low rDS(on) and high efficiency ■ Next generation enhanced body diode technology, engineered for soft recovery ■ MSL1 robust package design ■ 100% UIL tested ■ RoHS Compliant Application Notes
ModelsFor additional information please visit the Models page .
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