60V N-Channel PowerTrench® MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance.
Product Status/Pricing/Packing
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Features
■ Maximum RDS(on) = 4.1mΩ at VGS = 8V, ID = 18.5A ■ Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency ■ Next-Generation Enhanced Body Diode Technology, Engineered for Soft Recovery ■ MSL1 Robust Package Design ■ 100% UIL Tested ■ RoHS Compliant Application Notes
ModelsFor additional information please visit the Models page .
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