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General Description
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Features
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Max rDS(on) = 9.0mΩ at VGS = 10V, ID = 12A
Max rDS(on) = 14.0mΩ at VGS = 4.5V, ID = 10.5A
Advanced Package and Silicon combination for
low rDS(on) and high efficiency
MSL1 robust package design
RoHS Compliant
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Applications
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High Side for Synchronous Buck to Power Core Processor
Secondary Side Synchronous Rectifier
High Side Switch in POL DC/DC Converter
Oring FET/ Load Switch
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Datasheet
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