FDP120N10

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100V N-Channel PowerTrench® MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FDP120N10 Full Production ROHS Compliant $1.88 TO220 3-LEAD 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FDP
Line 3:120N10
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Features

  • RDS(on) = 9.7 mΩ ( Typ.)@ VGS = 10V, ID = 74A
  • Fast Switching Speed
  • Low Gate Charge
  • High Performance Trench Technology for Extremely Low RDS(on)
  • High Power and Current Handling Capability
  • RoHS compliant

Applications

  • TBA

Models

For additional information please visit the Models page .

Package & leads Condition Temperature range Vcc range Software version Revision date
Pspice_Bsim3.1
TO220 3-LEAD-3 Electrical -55°C to 150°C N/A OrCAD 15.7 Apr 26, 2011
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