Products » FDP12N50 N-Channel UniFET^TM MOSFET 500V, 11.5A, 650mΩ

FDP12N50 − N-Channel UniFET^TM MOSFET 500V, 11.5A, 650mΩ

UniFET^TM MOSFET is Fairchild Semiconductor^®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

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Product Status/Pricing/Packaging

Index	Product	Product & Eco Status	*Pricing	Packaging & Packing Info	**Package Marking Convention	Qualification Support	Compliance Certificates
0	FDP12N50	Full Production ROHS Compliant	$1.21	TO-220 3L Details TO-220 3L Drawing RAIL	Line 1:$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2:FDP Line 3:12N50	RTHETA (JA) : 62.5 °C/W R_ƟJC : 0.75 °C/W Moisture Sensitivity Level (MSL) : NA Show more... Max Reflow Temp : 999	RoHS IPC1752 RoHS/REACH/JIG RoHS/REACH/JIG

Fairchild 1,000 piece Budgetary Pricing. *
If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
Top mark packaging information for product FDP12N50 is available. **

Features

R_DS(on) = 550mΩ ( Typ.)@ V_GS = 10V, I_D = 6A
Low gate charge ( Typ. 22nC)
Low C_rss ( Typ. 11pF)
100% avalanche tested
RoHS compliant

Applications

AC-DC Merchant Power Supply

Consumer Appliances

DC-DC Merchant Power Supply

DVD/Set Top Boxes

EMS

LCD Monitor

LCD TV

LED TV

Lighting

Notebook PC

Desktop PC

PC Server

PDP TV

Uninterruptible Power Supply

Application Notes

Application Note	Description
AN-7533	A Revised MOSFET Model With Dynamic Temperature Compensation(132 K) 05-Mar-2011
AN-6099	New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications(1,172 K) 12-Mar-2013
AN-9065	FRFET® in Synchronous Rectification(156 K) 14-Feb-2013
AN-558	Introduction to Power MOSFETs and their Applications(244 K) 03-May-2013
AN-9005	Driving and Layout Design for Fast Switching Super-Junction MOSFETs(1,778 K) 14-Feb-2013
AN-7510	A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options(222 K) 05-Mar-2011
AN-9010	MOSFET Basics(361 K) 05-Mar-2011
AN-9066	UniFET™ Optimized Switch for Discontinuous Current Mode Power Factor Correction(440 K) 03-Mar-2011
AN-9725	Robust Body Diode Characteristics of the Latest Power MOSFETs, UniFET™ II for Resonant Converters(871 K) 10-Mar-2011

Additional Resources

Design Tools Knowledgebase – Ask a Question Find a local sales office Product change notices (PCN) How to Buy Products or Order Samples


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FDP12N50 − N-Channel UniFETTM MOSFET 500V, 11.5A, 650mΩ