FDP19N40

Datasheet Buy Sample

400V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FDP19N40 Full Production ROHS Compliant $1.68 TO220 3-LEAD 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FDP
Line 3:19N40
PDF opens in a new window
XML opens in a new window
PDF opens in a new window

Features

  • RDS(on) =0.2O ( Typ.)@ VGS = 10V, ID = 9.5A
  • Low Gate Charge ( Typ. 32nC)
  • Low Crss ( Typ. 20pF)
  • Low Crss ( Typ. 20pF)
  • 100% Avalanche Tested
  • 100% Avalanche Tested
  • RoHS Compliant

Applications

  • TBA
Multilanguage - Chinese Multilanguage - English Multilanguage - Japanese Multilanguage - Korean