FDP22N50N

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500V N-Channel MOSFET UniFET™

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.          This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FDP22N50N Full Production ROHS Compliant $2.23 TO220 3-LEAD 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FDP
Line 3:22N50N
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Features

  • RsubDS(on)/sub = 0.185Ω ( Typ.)@ VsubGS/sub = 10V, IsubDsub/ = 11A
  • Low gate charge ( Typ. 49nC)
  • Low Csubrss/sub ( Typ. 24pF)
  • Fast switching
  • 100% avalanche tested
  • Improve dv/dt capability
  • RoHS compliantlt/

Applications

  • TBA

Application Notes

Models

For additional information please visit the Models page .

Package & leads Condition Temperature range Vcc range Software version Revision date
PSPICE
TO220 3-LEAD-3 Thermal;Electrical -55°C to 150°C 0V to 10V OrCAD 15.7 Apr 26, 2011
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