FDP26N40

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400V N-Channel MOSFET, UniFET™

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.     This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
FDP26N40 Full Production ROHS Compliant $2.03 TO-220 3L 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FDP
Line 3:26N40
FIT :  12.86  
RTHETA (JA) :  62.5  °C/W
RTHETA (JC) :  0.5  °C/W
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Features

  • RDS(on) = 0.13Ω ( Typ.)@ VGS = 10V, ID = 13A
  • Low gate charge ( Typ. 48nC)
  • Low Crss ( Typ. 30pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant

Applications

  • AC-DC Merchant Power Supply - Desktop PC
  • AC-DC Merchant Power Supply - Servers & Workstations
  • Desktop PC
  • Server & Mainframe
  • Workstation

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-220 3L Thermal;Electrical 25°C to 150°C 0V to 50V OrCAD 15.7 Feb 28, 2012
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