FDP52N20

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highly efficient switched-mode power supplies and active power factor correction.

• Fairchild 1,000 piece Budgetary Pricing. *
• If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
• Top mark packaging information for product FDP52N20 is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	Qualification Support	RoHS IPC1752	RoHS/REACH/ JIG Certificate of Compliance
FDP52N20	Full Production	ROHS Compliant	$1.72	TO-220 3L	3	RAIL		Line 1:$Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K Line 2:FDP Line 3:52N20	FIT :  12.86   RTHETA (JA) :  62.5  °C/W RTHETA (JC) :  0.35  °C/W Show more ... Moisture Sensitivity Level (MSL) :  NA   Max Reflow Temp :  999