FDP61N20

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200V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched-mode power supplies and active power factor correction.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
FDP61N20 Full Production ROHS Compliant $1.85 TO-220 3L 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FDP
Line 3:61N20
FIT :  12.86  
RTHETA (JA) :  62.5  °C/W
RTHETA (JC) :  0.3  °C/W
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Features

  • 61A, 200V, RDS(on) = 0.041 mΩ @ VGS = 10V
  • Low Gate Charge ( typical 58 nC)
  • Low Crss (Typical 80 pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability

Applications

  • Other Audio & Video

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-220 3L Thermal;Electrical 25°C to 150°C 0V to 50V OrCAD 10.3 Feb 28, 2012
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