UniFETTM II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. The body diode’s reverse recovery performance of UniFET II FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
| Product | Product & Eco Status | *Pricing | Packaging & Packing Info | **Package Marking Convention | Qualification Support | Compliance Certificates |
|---|---|---|---|---|---|---|
| FDPF5N50NZF |
Full Production Green as of Jan 2010 |
$0.75 | TO-220F 3L Details RAIL |
Line 1:$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2:FDPF
Line 3:5N50NZF |
RTHETA (JA) :
62.5
°C/W RƟJC : 4.1 °C/W Moisture Sensitivity Level (MSL) : NA Show more... |
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| Application Note | Description |
|---|---|
| AN-9065 | FRFET® in Synchronous Rectification(156 K) 14-Feb-2013 |
| AN-7510 | A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options(222 K) 05-Mar-2011 |
| AN-558 | Introduction to Power MOSFETs and their Applications(244 K) 03-May-2013 |
| AN-7533 | A Revised MOSFET Model With Dynamic Temperature Compensation(132 K) 05-Mar-2011 |
| AN-9010 | MOSFET Basics(361 K) 05-Mar-2011 |
| AN-6099 | New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications(1,172 K) 12-Mar-2013 |
| AN-9005 | Driving and Layout Design for Fast Switching Super-Junction MOSFETs(1,778 K) 14-Feb-2013 |
| AN-9725 | Robust Body Diode Characteristics of the Latest Power MOSFETs, UniFET™ II for Resonant Converters(871 K) 10-Mar-2011 |