This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low R_DS(ON) and fast switching speed.

• 16 A, 20 V
• R_DS(on) = 6 mW@ V_GS = 4.5 V
• R_DS(on) = 7 mW @ V_GS = 2.5 V
• R_DS(on) = 9 mW @ V_GS = 1.8 V
• Low gate charge
• High performance trench technology for extremely low R_DS(ON)
• High power and current handling capability

• DC/DC converter