FDS86252

Datasheet Buy Sample

150V N-Channel Power Trench® MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention Qualification Support RoHS IPC1752 RoHS/REACH/
JIG Certificate of Compliance
FDS86252 Full Production ROHS Compliant $0.8 SO 8L NB 8 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&2 (2-Digit Date Code) &K
Line 2:FDS
Line 3:86252
RTHETA (JA) :  50  °C/W
RTHETA (JC) :  25  °C/W
Moisture Sensitivity Level (MSL) :  1  
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Features

  • Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A
  • Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • 100% UIL Tested
  • RoHS Compliant

Applications

  • TBA

Application Notes

Models

For additional information please visit the Models page .

Package Condition Temperature range Vcc range Software version Revision date
PSPICE
SO 8L NB Electrical -55°C to 175°C N/A Orcad 16.3 Jun 06, 2011
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