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FDS8813NZ
30V N-Channel PowerTrench MOSFET

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Contents

•General Description
•Features
•Product Status/Pricing/Packaging
•Order Samples
•Models
•Qualification Support

General Description

This N–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance.

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

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Features

  • Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A
  • Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID = 16A
  • HBM ESD protection level of 5.6kV typical (note 3)
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • RoHS compliant
    		•

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    Datasheet
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    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FDS8813NZFull ProductionRoHS Compliant$1.06SOIC8TAPE REEL PDFLine 1: $Y (Fairchild logo)
    &Z (Asm. Plant Code)
    &2 (2-Digit Date Code)
    &K Line 2: FDS Line 3: 8813NZ
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FDS8813NZ is available. Click here for more information .

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    Models

    Package & leadsConditionTemperature rangeSoftware versionRevision date
    Pspice_Bsim3.1
    SOIC-8Electrical-55°C to 150°COrCAD 10.3Jun 11, 2007

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    Qualification Support

    Click on a product for detailed qualification data

    Product
    FDS8813NZ

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