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30V Dual N & P-Channel PowerTrench® MOSFET
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General Description
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These dual N and P-Channel enhancement mode power
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
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Features
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Q1: N-Channel
Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A
Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A
Q2: P-Channel
Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A
Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A
High power and handing capability in a widely used surface
mount package
Fast switching speed
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Applications
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Inverter
Synchronous Buck
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Datasheet
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This page
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Product Status/Pricing/Packaging
| FDS8858CZ | Full Production | RoHS Compliant | $0.78 | SO-8 | 8 | TAPE REEL
| | Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&2 (2-Digit Date Code)
&K
Line 2: FDS
Line 3: 8858CZ
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* Fairchild 1,000 piece Budgetary Pricing
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| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
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Models
| SO-8-8 | Electrical | -55°C to 150°C | OrCAD 15.7 | Oct 10, 2008 |
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Qualification Support
Click on a product for detailed qualification data
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Eco Status