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FDS8858CZ
30V Dual N & P-Channel PowerTrench MOSFET

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Contents

•General Description
•Features
•Applications
•Product Status/Pricing/Packaging
•Order Samples
•Models
•Qualification Support

General Description

These dual N and P-Channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

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Features

Q1: N-Channel
  • Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A
  • Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A
    • Q2: P-Channel
  • Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A
  • Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A
  • High power and handing capability in a widely used surface mount package
  • Fast switching speed
    		•

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    Applications

  • Inverter
  • Synchronous Buck
    		•

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    Datasheet
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    Product Status/Pricing/Packaging      buy now

    ProductProduct statusEco StatusPricing*Package typeLeadsPacking methodPackage DrawingPackage Marking Convention**
    FDS8858CZFull ProductionRoHS Compliant$0.78SO-88TAPE REEL PDFLine 1: $Y (Fairchild logo)
    &Z (Asm. Plant Code)
    &2 (2-Digit Date Code)
    &K Line 2: FDS Line 3: 8858CZ
    * Fairchild 1,000 piece Budgetary Pricing
    ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

    Package marking information for product FDS8858CZ is available. Click here for more information .

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    Models

    Package & leadsConditionTemperature rangeSoftware versionRevision date
    Pspice_Bsim3.1
    SO-8-8Electrical-55°C to 150°COrCAD 15.7Oct 10, 2008

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    Qualification Support

    Click on a product for detailed qualification data

    Product
    FDS8858CZ

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