These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
| Product | Product & Eco Status | *Pricing | Packaging & Packing Info | **Package Marking Convention | Qualification Support | Compliance Certificates |
|---|---|---|---|---|---|---|
| FDT457N |
Full Production ROHS Compliant |
$0.68 | SOT-223 4L Details TAPE REEL |
Line 1:$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K
Line 2:457
|
ESD (CDM) :
2000
V ESD (HBM) : 250 V RTHETA (JA) : 42 °C/W Show more... |
|
|
|
|
| Application Note | Description |
|---|---|
| AN-9065 | FRFET® in Synchronous Rectification(156 K) 14-Feb-2013 |
| AN-9005 | Driving and Layout Design for Fast Switching Super-Junction MOSFETs(1,778 K) 14-Feb-2013 |
| AN-6099 | New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications(1,172 K) 12-Mar-2013 |
| AN-7533 | A Revised MOSFET Model With Dynamic Temperature Compensation(132 K) 05-Mar-2011 |
| AN-7510 | A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options(222 K) 05-Mar-2011 |
| AN-558 | Introduction to Power MOSFETs and their Applications(244 K) 03-May-2013 |
| AN-9010 | MOSFET Basics(361 K) 05-Mar-2011 |
| AN-1028 | Maximum Power Enhancement Techniques for SOT-223 Power MOSFETs(262 K) 05-Mar-2011 |
For additional information please visit the Models page.
| Package | Condition | Temperature Range | Vcc Range | Software Version | Revision Date |
|---|---|---|---|---|---|
| PSPICE | |||||
| SOT-223 4L | Electrical | 25°C to 125°C | N/A | Orcad 9.1 | Feb 28, 2012 |