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General Description
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This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r DS(on) and fast switching speed.
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Features
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Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A
Max rDS(on) = 5.5mΩ at VGS = 4.5V, ID = 35A
Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V
Low gate resistance
RoHS Compliant
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Applications
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Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
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Datasheet
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