FDV301N

This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.

• Fairchild 1,000 piece Budgetary Pricing. *
• If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
• Top mark packaging information for product FDV301N is available. **

Product	Product Status	Eco Status	*Pricing	Package Type	Leads	Packing Method	Package Drawing	**Package Marking Convention	RoHS IPC1752	RoHS/REACH/JIG Certificate of Compliance
FDV301N	Full Production	ROHS Compliant	$0.178	SOT23 3-LEAD	3	TAPE REEL		Line 1:&E (Space) &Y (Binary Calendar Year Coding) Line 2:301
FDV301N_NB9V005	Full Production	ROHS Compliant	$0.05	SOT23 3-LEAD	3	TAPE REEL		Line 1:&E (Space) &Y (Binary Calendar Year Coding) Line 2:301
FDV301N_NB9V008	Full Production	ROHS Compliant	$0.05	SOT23 3-LEAD	3	TAPE REEL		Line 1:&E (Space) &Y (Binary Calendar Year Coding) Line 2:301