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1000V, 60A NPT-Trench IGBT
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General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction
and switching characteristics as well as enhanced
avalanche ruggedness. These devices are well suited for
Induction Heating ( I-H ) applications
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Features
- High Speed Switching
- Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
- High Input Impedance
- Built-in Fast Recovery Diode
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Applications
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Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance
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