FGD3N60LSD

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IGBT

General Description

Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FGD3N60LSDTM Full Production ROHS Compliant $0.6 TO-252(DPAK) 3 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FGD
Line 3:3N60LSD
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Features

    High Current CapabilityVery Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3 AHigh Input Impedance

Applications

  • Power Train

Models

For additional information please visit the Models page .

Package & leads Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-252(DPAK)-3 Thermal;Electrical 25°C to 125°C 0V to 10V OrCAD 16.3 Jun 14, 2011
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