PDD IGBT
| | |  |  |  |
|
|
General Description
|
The FGH30N60LSD is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors.This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
|
back to top
Features
|
Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
High Input Impedance
Low Conduction Loss
|
back to top
Applications
|
Solar inverters
UPS, Welder
|
back to top
|  | 
Datasheet
Download this datasheet
e-mail this datasheet
This page
|
Product Status/Pricing/Packaging 
| FGH30N60LSDTU | Full Production | RoHS Compliant | $9.04 | TO-247 | 3 | RAIL
| N/A | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K
Line 2: FGH30N60
Line 3: LSD
|
* Fairchild 1,000 piece Budgetary Pricing
|
| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
back to top
Qualification Support
Click on a product for detailed qualification data
back to top
|