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600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth™ Diode
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General Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and ava-lanche
capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
- Power Factor Correction (PFC) circuits
- Full bridge topologies
- Half bridge topologies
- Push-Pull circuits
- Uninterruptible power supplies
- Zero voltage and zero current switching circuits
IGBT formerly Developmental Type TA49336
Diode formerly Developmental Type TA49390
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Features
-
100kHz Operation at 390V, 14A
- 200kHZ Operation at 390V, 9A
- 600V Switching SOA Capability
- Typical Fall Time. . . . . . 90ns at TJ = 125°C
- Low Gate Charge. . . . . . 23nC at VGE = 15V
- Low Plateau Voltage. . . . . . 6.5V Typical
- UIS Rated. . . . . . 150mJ
- Low Conduction Loss
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