The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for medium frequency switch mode power supplies.

Formerly Developmental Type TA49485

• Low V_CE(SAT) . . . . . . . . . . . < 1.4V max
• Low E_OFF . . . . . . . . . . . . . < 200µJ
• SCWT (@ T_J = 125°C). . . . . . . . > 8µs
• 300V Switching SOA Capability
• Positive VCE(SAT) Temperature Coefficient above 50A