FGH50N6S2D

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600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth™ Diode

General Description

The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • Power Factor Correction (PFC) circuits • Full bridge topologies • Half bridge topologies • Push-Pull circuits • Uninterruptible power supplies • Zero voltage and zero current switching circuits     IGBT formerly Developmental Type TA49344 Diode formerly Developmental Type TA49392

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FGH50N6S2D Not recommended for new design ROHS Compliant TO-247 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
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Line 2:50N6S2D
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Features

  • 100kHz Operation at 390V, 40A
  • 200kHZ Operation at 390V, 25A
  • 600V Switching SOA Capability
  • Typical Fall Time. . . . . . 90ns at TJ = 125°C
  • Low Gate Charge. . . . . . 70nC at VGE = 15V
  • Low Plateau Voltage. . . . . . 6.5V Typical
  • UIS Rated. . . . . . 480mJ
  • Low Conduction Loss

Application Notes

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