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600V N-Channel Advance QFET® C-Series
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General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
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Features
- 10A, 600V, RDS(on) = 0.73W @VGS = 10 V
- Low gate charge (typical 44 nC)
- Low Crss (typical 18 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
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