FQA11N90C_F109

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900V N-Channel QFET® MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.                                                                       This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FQA11N90C_F109 Full Production ROHS Compliant $2.88 TO3P 3-LEAD 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FQA
Line 3:11N90C
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Features

  • 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V
  • Low gate charge ( typical 60 nC)
  • Low Crss ( typical 23pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS compliant

Applications

  • TBA

Models

For additional information please visit the Models page .

Package & leads Condition Temperature range Vcc range Software version Revision date
PSPICE
TO3P 3-LEAD-3 Thermal;Electrical -55°C to 150°C 0V to 50V OrCAD 15.7 Apr 26, 2011
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