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FRFET®: 500V N-Channel MOSFET QFET®
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General Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild.s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficiency
switched mode power supplies, active power factor correction,
electronic lamp ballasts based on half bridge topology.
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Features
- 15A, 500V
- RDS(on) = 0.048W@ VGS = 10 V
- Low gate charge (typical 43 nC)
- Low Crss (typical 20pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Fast recovery body diode (typical 100ns)
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