|  |
80V N-Channel QFET®
| | |  |  |  |
|
|
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as high efficiency
switching DC/DC converters, and DC motor control.
|
back to top
Features
- 160A, 80V, R DS(on)
= 0.007W @V GS = 10 V
- Low gate charge ( typical 220 nC)
- Low Crss ( typical 530 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175ºC maximum junction temperature rating
| | |