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60V N-Channel QFET®
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General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
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Features
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170A, 60V, RDS(on) = 0.0056W @VGS = 10 V
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Low gate charge ( typical 220 nC)
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Low Crss ( typical 620 pF)
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Fast switching
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100% avalanche tested
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Improved dv/dt capability
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175°C maximum junction temperature rating
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