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600V N-Channel QFET®
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General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
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Features
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18.5A, 600V, RDS(on) = 0.38W @VGS = 10 V
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Low gate charge ( typical 70 nC)
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Low Crss ( typical 35 pF)
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Fast switching
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100% avalanche tested
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Improved dv/dt capability
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