Products » FQA19N60 N-Channel QFET^® MOSFET 600V, 18.5A, 380mΩ

FQA19N60 − N-Channel QFET^® MOSFET 600V, 18.5A, 380mΩ

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor^®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

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Product Status/Pricing/Packaging

Index	Product	Product & Eco Status	*Pricing	Packaging & Packing Info	**Package Marking Convention	Qualification Support	Compliance Certificates
0	FQA19N60	Full Production ROHS Compliant	$3.67	TO-3P 3L Details TO-3P 3L Drawing RAIL	Line 1:$Y (Fairchild logo) &Z (Plant Code) &3 (3-Digit Date Code) &K Line 2:FQA Line 3:19N60	RTHETA (JA) : 40 °C/W R_ƟJC : 0.42 °C/W Moisture Sensitivity Level (MSL) : NA Show more... Max Reflow Temp : 999	RoHS IPC1752 RoHS/REACH/JIG RoHS/REACH/JIG

Fairchild 1,000 piece Budgetary Pricing. *
If there is no sample button displayed at the top of the page, please contact one of the Fairchild distributors or your local sales office to obtain samples.
Top mark packaging information for product FQA19N60 is available. **

Features

18.5A, 600V, R_DS(on) = 380mΩ(Max.) @V_GS = 10 V, I_D = 9.3A
Low gate charge ( Typ. 70nC)
Low C_rss ( Typ. 35pF)
100% avalanche tested

Applications

Desktop PC

AC-DC Merchant Power Supply - Desktop PC

Application Notes

Application Note	Description
AN-6004	500W Power-Factor-Corrected (PFC) Converter Design with FAN4810(547 K) 05-Mar-2011
AN-7533	A Revised MOSFET Model With Dynamic Temperature Compensation(132 K) 05-Mar-2011
AN-9065	FRFET® in Synchronous Rectification(156 K) 14-Feb-2013
AN-7510	A New PSPICE Subcircuit for the Power MOSFET Featuring Global Temperature Options(222 K) 05-Mar-2011
AN-558	Introduction to Power MOSFETs and their Applications(244 K) 03-May-2013
AN-9005	Driving and Layout Design for Fast Switching Super-Junction MOSFETs(1,778 K) 14-Feb-2013
AN-9010	MOSFET Basics(361 K) 05-Mar-2011
AN-6099	New PowerTrench® MOSFET with Shielded Gate Technology Increases System Efficiency and Power Density in Synchronous Rectification Applications(1,172 K) 12-Mar-2013

Models

For additional information please visit the Models page.

Package	Condition	Temperature Range	Vcc Range	Software Version	Revision Date
PSPICE
TO-3P 3L	Thermal;Electrical	-55°C to 150°C	N/A	Orcad 9.1	Feb 28, 2012

Additional Resources

Design Tools Knowledgebase – Ask a Question Find a local sales office Product change notices (PCN) How to Buy Products or Order Samples


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FQA19N60 − N-Channel QFET® MOSFET 600V, 18.5A, 380mΩ