FQA19N60 − N-Channel QFET® MOSFET 600V, 18.5A, 380mΩ

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

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Product Status/Pricing/Packaging

Product Product & Eco Status *Pricing Packaging & Packing Info **Package Marking Convention Qualification Support Compliance Certificates
0 FQA19N60 Full Production
ROHS Compliant
$3.67 TO-3P 3L Details RAIL Line 1:$Y (Fairchild logo)
&Z (Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FQA
Line 3:19N60
RTHETA (JA) :  40  °C/W
RƟJC :  0.42  °C/W
Moisture Sensitivity Level (MSL) :  NA  
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Features

  • 18.5A, 600V, RDS(on) = 380mΩ(Max.) @VGS = 10 V, ID = 9.3A
  • Low gate charge ( Typ. 70nC)
  • Low Crss ( Typ. 35pF)
  • 100% avalanche tested

Applications

  • Desktop PC
  • AC-DC Merchant Power Supply - Desktop PC

Application Notes

Models

For additional information please visit the Models page.

Package Condition Temperature Range Vcc Range Software Version Revision Date
PSPICE
TO-3P 3L Thermal;Electrical -55°C to 150°C N/A Orcad 9.1 Feb 28, 2012


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