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500V N-Channel FRFET QFET®
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General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
where the body diode is used such as phase-shift ZVS,
basic full-bridge topology.
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Features
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28.4A, 500V,
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RDS(on) = 0.16W @VGS = 10 V
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Low gate charge ( typical 110 nC)
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Low Crss ( typical 60 pF)
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Fast switching
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100% avalanche tested
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Improved dv/dt capability
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Fast recovery body diode ( max, 250ns )
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Eco Status
