These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive,DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

• -55A, -60V, R_DS(on)= 0.026W@V_GS= -10V
• Low gate charge ( typical 84 nC)
• Low Crss (typical 320 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175ºC maximum junction temperature rating