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200V N-Channel QFET®
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterrupted power supply, motor control.
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Features
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65A, 200V, RDS(on) = 0.032W @VGS = 10 V
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Low gate charge ( typical 170 nC)
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Low Crss ( typical 90 pF)
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Fast switching
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100% avalanche tested
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Improved dv/dt capability
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