These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching for DC/DC converters,a nd DC motor control, uninterrupted power supply.

• 70A, 150V, R_DS(on) = 0.028W @V_GS = 10 V
• Low gate charge ( typical 135 nC)
• Low Crss ( typical 135 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°Cmaximum junction temperature rating