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1000V N-Channel MOSFET QFET®
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General Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild.s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high efficient
switched mode power supplies.
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Features
- 8A, 1000V, RDS(on) = 1.45W@VGS = 10V
- Low gate charge (typical 53nC)
- Low Crss (typical 16pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
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