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80V N-Channel QFET®
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General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
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Features
- 90A, 80V, R DS(on)
= 0.016W @V GS = 10 V
- Low gate charge ( typical 84 nC)
- Low Crss ( typical 200 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175ºC maximum junction temperature rating
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