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150V N-Channel QFET®
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General Description
These N-Channel enhancement mode power field effect transistors
are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance,
and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for low voltage
applications such as audio amplifire, high efficiency switching
for DC/DC converters, and DC motor control, uninterrupted
power supply.
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Features
- 90A, 150V, RDS(on) = 0.018W@VGS = 10V
- Low gate charge (typical 220nC)
- Low Crss (typical 200pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
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