FQAF11N90C

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900V N-Channel Advance QFET® C-series

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FQAF11N90C Full Production ROHS Compliant $3.17 TO-247/TO-3P/TO-3PF 3 RAIL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
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Features

  • 7.0A, 900V, RDS(on) = 1.1Ω @VGS = 10 V
  • Low gate charge (typical 60nC)
  • Low Crss (typical 23 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

  • TBA
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