|  |
900V N-Channel Advance QFET® C-series
| | | | | |
|
|
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
|
back to top
Features
- 7.0A, 900V, RDS(on) = 1.1W @VGS = 10 V
- Low gate charge (typical 60nC)
- Low Crss (typical 23 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
| | |
