|  |
800V N-Channel QFET®
| | | | | |
|
|
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
|
back to top
Features
-
8.0A, 800V
-
RDS(on) = 0.75W @VGS = 10 V
-
Low gate charge ( typical 68 nC)
-
Low Crss ( typical 30 pF)
-
Fast switching
-
100% avalanche tested
-
Improved dv/dt capability
| | |
![[E-mail]](/graphics/mail.gif){kind=small}
Eco Status
