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300V N-Channel QFET®
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.
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Features
14.4A, 300V, RDS(on) = 0.29W @VGS = 10 V
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Low gate charge ( typical 30 nC)
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Low Crss ( typical 23 pF)
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Fast switching
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100% avalanche tested
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Improved dv/dt capability
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RoHS Compliant
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Datasheet
Download this datasheet
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This page
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Product Status/Pricing/Packaging 
| FQB14N30TM | Lifetime Buy | RoHS Compliant | TO-263(D2PAK) | 2 | TAPE REEL
| TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K
Line 2: FQB
Line 3: 14N30
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Models
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Qualification Support
Click on a product for detailed qualification data
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