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60V P-Channel QFET®
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General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive,DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
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Features
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-17A, -60V, RDS(on)=
0.12W@VGS= -10V
Low gate charge ( typical 21 nC)
Low Crss (typical 80 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
RoHS Compliant
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Datasheet
Download this datasheet
e-mail this datasheet
This page
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Product Status/Pricing/Packaging 
| FQB17P06TM | Lifetime Buy | RoHS Compliant | TO-263(D2PAK) | 2 | TAPE REEL
| TBD | Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &3 (3-Digit Date Code) &K
Line 2: FQB
Line 3: 17P06
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Qualification Support
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