FQB1P50

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500V P-Channel QFET®

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.

Product Status/Pricing/Packing

Product Product Status Eco Status *Pricing Package Type Leads Packing Method Package Drawing **Package Marking Convention RoHS IPC1752 RoHS/REACH/JIG Certificate of Compliance
FQB1P50TM Full Production ROHS Compliant $0.84 TO-263(D2PAK) 2 TAPE REEL PDF Line 1:$Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2:FQB
Line 3:1P50
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Features

  • -1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V
  • Low gate charge ( typical 11 nC)
  • Low Crss ( typical 6.0 pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability
  • RoHS Compliant

Applications

  • TBA

Models

For additional information please visit the Models page .

Package & leads Condition Temperature range Vcc range Software version Revision date
PSPICE
TO-263(D2PAK)-2 Electrical -55°C to 150°C N/A Orcad 9.1 Jun 14, 2011
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