|  |
500V P-Channel QFET®
| | | | | |
|
|
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are well
suited for electronic lamp ballasts based on the complementary
half bridge topology.
|
back to top
Features
|
-1.5A, -500V, RDS(on) = 10.5Ω @VGS = -10 V
Low gate charge ( typical 11 nC)
Low Crss ( typical 6.0 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS Compliant
|
back to top
| | 
Datasheet
Download this datasheet
e-mail this datasheet
![[E-mail]](/graphics/mail.gif)
This page
|
Product Status/Pricing/Packaging
| FQB1P50TM | Full Production | RoHS Compliant | $0.74 | TO-263(D2PAK) | 2 | TAPE REEL
| TBD | Line 1: $Y (Fairchild logo)
&Z (Asm. Plant Code)
&3 (3-Digit Date Code)
&K
Line 2: FQB
Line 3: 1P50
|
* Fairchild 1,000 piece Budgetary Pricing
|
| ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples |
back to top
Models
| TO-263(D2PAK)-2 | Electrical | -55°C to 155°C | 9.2 | Aug 21, 2001 |
back to top
Qualification Support
Click on a product for detailed qualification data
back to top
|
Eco Status